Postdoc: Physico-chemical analyses of SrVO3 ultra-thin layers and interfaces at the metal / insulator transition for new break electronics

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Institut Lavoisier de Versailles
Versailles, France
Job Info
Job Status: Expired
No of Vacancies: 1
Date Posted: January 30, 2018
Expiry Date: March 31, 2018
Job Type: Postdoc
Job Level: Any
Years of Experience: 2
Salary Info
Salary Type: Negotiable
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A postdoctoral Research Fellow position (supported by LabEx CHARM3AT www.charmmmat.fr) is available in the “Electrochemistry and Interfacial Physico-chemistry” (EPI) group at the Institut Lavoisier de Versailles
(www.ilv.uvsq.fr) in partnership with the “Functional magnetic OXide” (FOX) team at the Groupe d’Etude de la MAtiere Condensée (GEMaC) laboratory (www.gemac.uvsq.fr). The activities of the EPI group are related to the modification of oxide, semiconductor and metal surfaces by chemical and electrochemical processes coupled with advanced surface analysis characterizations (ESCA/XPS, ARXPS,AES, LEIS…) developed in its spectroscopy center CEFS2.

The proposed research project concerns a fine physico-chemical study and an accurate chemical environment determination of conductive oxide SrVO3 (SVO) ultra-thin layers (free and buried), for general goal of integration of functional oxides for breakthrough electronics. Reproducible and well understand fine stoichiometry both for cations and for oxygen has to be tuned, thanks to advanced chemical spectroscopies. Deposition parameters of the perovskite oxide film grown by Pulsed Laser Deposition (PLD) will be optimized, combining XPS and electrical measurements (magneto-transport: resistivity and Hall). Fine analysis of chemical composition of free and buried SVO films, will be performed while profiling with a soft sputtering method (Ar cluster ion beam). This will allow disentangling origins of metal/insulator transition in ultrathin free and buried SVO, such as SVO capped by LAO (LaAlO3) ultrathin layer. Thus, XPS and LEIS measurements will be performed and an advanced set up for oxide depth-profiling dedicated to the study of buried interface properties will be developed (cationic ratio and oxygen stoichiometry).

This work will be performed within the collaboration between EPI-ILV and FOX-GEMaC groups specialized on complementary themes:
– Advanced surface and interface characterizations
– Materials science: from elaboration to physical properties
Contact: Dr Frégnaux Mathieu / Dr Berini Bruno / Dr Aureau Damien / Pr Dumont Yves

Email: mathieu.fregnaux@uvsq.fr

Candidates profile:
The successful candidate should have a PhD degree in chemistry, physics or materials science and demonstrate knowledge in oxides, thin films, and chemical/physical spectroscopies. Experience with the XPS data treatment will be an advantage. A track-record of high quality scientific publications is desirable. The initial duration of the post-doctoral fellowship is 12-15 months. Evaluation of submitted applications will begin in October 2017, and continue until the position is filled.
The Fellowship can be started from November 2017 to early 2018.
Keywords:
Oxides, ultra-thin films, perovskites, XPS, depth profiling, metal/insulator transition